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| SUM55P06-19L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) () 0.019 at VGS = - 10 V 0.025 at VGS = - 4.5 V ID (A)d - 55 - 48 Qg (Typ.) 76 FEATURES * TrenchFET(R) Power MOSFET Available RoHS* COMPLIANT S TO-263 G G DS D Top View Ordering Information: SUM55P06-19L SUM55P06-19L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range a Symbol VDS VGS TC = 25 C TC = 125 C ID IDM L = 0.1 mH TC = 25 C TA = 25 Cb IAS EAS PD TJ, Tstg Limit - 60 20 - 55 - 31 - 150 - 45 101 125c 3.75 - 55 to 175 Unit V A mJ W C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle 1%. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. * Pb containing terminations are not RoHS compliant, exemptions may apply. PCB Mountb Symbol RthJA RthJC Limit 40 1.2 Unit C/W Document Number: 73059 S-80272-Rev. C, 11-Feb-08 www.vishay.com 1 SUM55P06-19L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 125 C VDS = - 60 V, VGS = 0 V, TJ = 175 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 C VGS = - 10 V, ID = - 30 A, TJ = 175 C VGS = - 4.5 V, ID = - 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Fall Timec c c c c a Symbol Test Conditions Min. - 60 -1 Typ. Max. Unit -3 100 -1 - 50 - 250 V nA A A - 120 0.015 0.019 0.033 0.041 0.020 20 0.025 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDS = - 15 V, ID = - 50 A S 3500 VGS = 0 V, VDS = - 25 V, f = 1 MHz 390 290 76 VDS = - 30 V, VGS = - 10 V, ID = - 55 A f = 1.0 MHz VDD = - 30 V, RL = 0.54 ID - 55 A, VGEN = - 10 V, Rg = 2.5 16 19 5.2 12 15 80 230 Cb - 110 - 240 IF = - 50 A, VGS = 0 V IF = - 50 A, di/dt = 100 A/s - 1.0 45 - 2.6 0.059 - 1.5 68 4.0 0.136 A V ns A C 20 25 120 350 ns 115 nC pF Turn-Off Delay Timec Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73059 S-80272-Rev. C, 11-Feb-08 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) 5V I D - Drain Current (A) 120 200 TC = - 55 C 160 25 C 125 C 120 80 4V 80 40 2V 0 0 3 6 9 12 15 3V 40 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 100 TC = - 55 C g fs - Transconductance (S) 80 25 C 60 125 C r DS(on) - On-Resistance () 0.04 0.05 Transfer Characteristics 0.03 VGS = 4.5 V 0.02 VGS = 10 V 40 20 0.01 0 0 6 12 18 24 30 36 42 48 54 60 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance 5000 4500 4000 Ciss C - Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 0 0 Coss Crss VGS - Gate-to-Source Voltage (V) 16 20 On-Resistance vs. Drain Current VDS = 30 V ID = 55 A 12 8 4 20 40 60 80 100 120 140 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 73059 S-80272-Rev. C, 11-Feb-08 Gate Charge www.vishay.com 3 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.2 VGS = 10 V ID = 30 A 100 1.9 rDS(on) - On-Resistance 1.6 (Normalized) I S - Source Current (A) TJ = 150 C 10 TJ = 25 C 1.3 1.0 0.7 0.4 - 50 - 25 0 25 50 75 100 125 150 175 1 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 75 ID = 10 mA 72 100 V(BR)DSS (V) I Dav (A) 69 10 IAV (A) at TA = 25 C 66 1 IAV (A) at TA = 150 C 0.1 0.0001 0.001 0.01 tin (s) 0.1 1 63 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 73059 S-80272-Rev. C, 11-Feb-08 SUM55P06-19L Vishay Siliconix THERMAL RATINGS 60 1000 Limited by r DS(on)* 10 s I D - Drain Current (A) 40 I D - Drain Current (A) 100 50 30 10 100 s 1 ms 10 ms 100 ms, DC 20 1 10 TC = 25 C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Case Temperature (C) Maximum Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 62.5 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73059. Document Number: 73059 S-80272-Rev. C, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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